Numonyx® Axcell™ M29W/DW Flash Memory



The Numonyx® Axcell™ M29W/M29DW family meets the most demanding needs of designers looking for densities from 4Mb to 256Mb, with the added advantages of ease-of-use and reliability.

The M29DW family features flexible partition Read-While-Write/Erase (RWW/E) operation, which allows data to be read from one bank, or group of banks, while the other is written or erased.

The memories are divided into blocks that can be erased independently to allow valid data to be preserved while old data is erased. M29W/DW offers higher flexibility in code storage via both asymmetrical and symmetrical block architecture. In the first case, the memory array includes a Boot Block (at the top or bottom of the address space to suit different microprocessors), a parameter and main blocks. In the symmetrical architecture the blocks have the same size. Each block can sustain over 100,000 program/erase cycles with 20 years data retention.

The M29W/DW  product family offers a wide range of package options including TSOP and FBGA.

The Numonyx® Axcell™ M29W family is also offered in Automotive-grade solutions, with temperature ranges from -40º to +125º C and from 40º to + 85º C, and is AEC-Q100 certified, with full PPAP support suited to Automotive applications with x16 databus width.


Features and Benefits
Features Benefits
Density range: 4 Mb-256 Mb Broad range to meet any design requirement
Packages: TSOP,BGA Options to meet diverse application needs
Flexible partition Read-While-Write/Erase (RWW/E) operation Allows data to be read from one bank, or group of banks while the other is written or erased
Voltage range: 2.7-3.6Volt Full 3.3V voltage range
Page mode for 128Mb Allows for faster read operations
12V Vpp programming Allows for faster programming operations
Block sector locking Protection level against accidental modification