1.8 Volt Numonyx™ StrataFlash® Wireless Memory (L) delivers the combination of wireless performance and Numonyx StrataFlash memory value that today's wireless handset developers require. The L family is the world's first 1.8 V Multi-Level Cell (MLC) device, and it offers wireless designers the unique combination of memory features needed for today's rich wireless applications - high performance, high density and low-power operation. Delivered on fourth-generation MLC technology and 130nm process lithography, the L family enables highly reliable, high performance, yet cost-effective wireless solutions. L gives wireless products the capacity to do more while consuming less power in the process.

Stacking Solutions
The L family is offered in the Numonyx™ StrataFlash® Stacked Chip Scale Packaging (Stacked-CSP) product portfolio. These stacking solutions deliver wireless customers new levels of space savings by combining high-density Numonyx™ StrataFlash® Memory with flexible RAM options.

Wireless Performance
The L family continues the Numonyx tradition of wireless performance with these features from the W family: 

Read-While-Write/Erase Operation (RWW/E):
Next-generation cellular and wireless applications are incorporating more data features such as Internet browsing, data streaming, and text messaging. These types of system requirements are much more data intensive and require the higher throughput rates that are achieved with a RWW/E flash memory device.

Flexible-partition operation allows the processor to execute out of one partition and simultaneously write or erase in another partition. This feature improves the speed that information can be stored and accessed in the flash memory by up to 40 percent.

1.8 V Operation: Full 1.8 V operation allows the L18/L30 device to RWW/E over the entire 1.8 V EIA/JEDEC voltage range. The 1.8 V low-voltage operation supports 1.8 V logic, which produces energy savings of up to 60 percent. These energy savings result in reduced power consumption, extending the battery life.

This device is available in both a 1.8 V I/O (L18) and 3 V I/O (L30), making it the complete solution for both 1.8 V and 3 V applications.

Burst and Page Modes: The synchronous-burst mode and asynchronous-page mode read operations accelerate cell phone memory subsystems to the next level of performance. Memory bottlenecks are removed by accessing the flash memory contents with asynchronous page and synchronous burst reads. These fast reads allow for direct execution with zero wait-states at 54 MHz bus speed in 1.8 V systems.

Numonyx™ StrataFlash® Memory Value
Along with wireless performance, the L delivers the value of Numonyx StrataFlash Memory technology. By storing two bits of information in each memory cell instead of just one, Intel StrataFlash Memory technology allows twice the information to be stored in the same space, resulting in great value. Available in densities of in 128 Mb and 256 Mb for discrete devices, and stackable to 1 Gb, this new wireless flash memory from Intel allows wireless designers to increase the richness of features in their wireless designs at an attractive cost.

Meets Demands of Today's Wireless Devices
Today's wireless devices demand higher memory throughput for more advanced features, such as Internet browsing, e-mail, data streaming, and text messaging. 1.8 V Numonyx™ StrataFlash®  Wireless Memory (L), with dual-mode RWW/E operation and low 1.8 V operation, provides the performance needed for these advanced features, and the value of MLC technology in a single Flash memory device. Levels Above. Generations Ahead.