Numonyx > Home > Memory Products > NOR > Numonyx™ Wireless Flash Memory (W)

Numonyx™ Wireless Flash Memory (W)



High performance solutions for wireless applications
Numonyx™ Wireless Flash Memory (W) combines four major innovations into one product family:

  • Flexible partition Read-While-Write/Erase (RWW/E) operation
  • Synchronous burst and asynchronous page mode read operations
  • 1.8 V operations (3.0 V I/O option available)
  • Enhanced Factory Programming (EFP)

Available on industry-leading 65 nanometer process, Numonyx Wireless Flash memory integrates flexible partition RWW/E architecture with synchronous burst and asynchronous page mode read operations, the security-enabling features of Numonyx™  Advanced+ Boot Block (M28), and low 1.8V operation. In addition, the W family of products is fully supported by Numonyx™ Flash Data Integrator (FDI) software, which enables management of code, data and files in flash memory.

Read-While-Write/Erase Operation
Cellular and wireless applications incorporate data features such as Internet browsing, data streaming, and text messaging. These types of system requirements are much more data intensive and require the higher throughput rates that are achieved with a RWW/E flash memory device.

With flexible-partition operation, the processor can execute out of one partition and simultaneously write or erase in another partition. This feature improves the speed in which information can be stored and accessed in the flash memory by up to 40 percent.

Full 1.8 V Operation
Full 1.8 V operation allows the Numonyx Wireless Flash memory device to read, write, and erase over the entire 1.8 V EIA/JEDEC voltage range. The 1.8 V low-voltage operation supports 1.8 V logic, which produces energy savings of up to 60 percent. These energy savings result in reduced power consumption, extending the battery life.

Burst and Page Modes
The synchronous burst mode and asynchronous page mode read operations accelerate cell phone memory subsystems to the next level of performance. Memory bottlenecks are removed by accessing the flash memory contents with asynchronous page and synchronous burst reads. These fast reads allow for direct execution with zero wait-states up to 86 MHz in 1.8 V systems.

Multiple Densities and Packages
Numonyx 1.8 Volt Wireless Flash is available in 16-, 32- and 64Mb densities to accommodate a variety of needs. It is also available in both discrete and multi-chip packages, making it a complete solution for wireless applications.

Enhanced Factory Programming
EFP provides the fastest Flash memory manufacturing programming in the industry. Easy to implement, it uses a new programming algorithm that accelerates programming throughput, reducing costs substantially.


Features and Benefits
Features Benefits
Flexible multi-partition architecture 4-Mb partitions allow for changing code and data requirements.
Higher data throughput for more data-intensive cellular/wireless handset applications.
Execute code and write or erase data simultaneously.
Low voltage 1.8 V — 1.7 V to 2.0 V JEDEC standard Ideal for next-generation cellular/wireless handsets running on a battery.
Low power allows for smaller batteries.
Smaller batteries allow smaller handsets.
Longer talk times and longer standby times.
Longer time between battery recharges.
Flexible multi-partition architecture 8 Mb partitions allow for changing code and data requirements.
Higher data throughput for more data-intensive cellular/wireless handset applications.
Execute code and write or erase data simultaneously.
Burst and page mode interface Fast code execution.
Removes memory bottlenecks.
Supports higher performance burst processors.
Up to 86 MHz with zero wait-states.
Numonyx Wireless Flash Memory (W) software support
 Manage code execution and data maintenance in one device.
VF BGA package and Numonyx StrataFlash®  Stacked-CSP Small packaging for wireless applications.
Packetized data support.
Burst and page mode support.


Resources