CellularRAM Tech Notes

Type Secure Title & Description ID# Updated Size
Functional Differences Between CellularRAM 1.0 and CellularRAM 1.5 :  Discusses the functional difference between the CellularRAM 1.0 and CellularRAM 1.5 memory devices TN-45-01 08/2005 141.07 KB
CellularRAM Asynchronous and Mixed-Mode Slow-Clock WRITE Concerns:  Discusses the use of Micron CellularRAM-based devices in Mixed Mode operation and slow clock speeds TN-45-02 05/2005 100.22 KB
CellularRAM Multiplexed Async/Burst Operation:  Discusses multiplexing a non-multiplexed CellularRAM device at the substrate level TN-45-04 01/2009 687.75 KB
Density Migration for x16 Burst Multiplexed PSRAM Introduction:  Discusses the design differences to account for when migrating a burst multiplexed device from 16Mb to 64Mb TN-45-06 01/2006 65.9 KB
Implementing CellularRAM 2.0, x32 with Two CellularRAM 1.5 x16 Devices:  Documents how the x32 CR2.0 memory interface can be emulated using a two-die stack of x16 CR 1.5 devices TN-45-07 12/2006 107.52 KB
64Mb Async/Page CellularRAM P25A to P25Z Transition Guide:  Discusses migrating a design based on the async/page MT45W4MW16P (P25A) to the MT45W4MW16PC (P25Z) TN-45-08 10/2005 52.89 KB
64Mb Burst CellularRAM P25A to P25Z Transition Guide:  Discusses migrating a design based on the async/page/burst MT45W4MW16B (P25A) to MT45W4MW16BC (P25Z) TN-45-09 10/2005 64.45 KB
Designing Applications with the x16 Burst A/D Multiplexed Interface:  Discusses the differences between a burst non-A/D MUX and burst A/D MUX device TN-45-10 11/2005 83.73 KB
Using CellularRAM Memory to Replace UtRAM :  Assists migration from a 128Mb UtRAM design (K1B2816B6M) to Micron 128Mb CellularRAM memory (MT45W8MW16B). Both hardware and software changes are covered TN-45-13 01/2006 195.88 KB
Using CellularRAM Memory to Replace Fujitsu 3V FCRAM:  Discusses replacing Fujitsu 3V FCRAM with Micron CellularRAM memory TN-45-14 02/2006 195.22 KB
Row Boundary Crossing Functionality in CellularRAMâ„¢ Memory:  Explains row boundary crossing in Micron CellularRAM memory devices TN-45-15 11/2009 524.87 KB
Using CellularRAM Memory to Replace Fujitsu 1.8V FCRAM:  Discusses replacing Fujitsu 1.8V FCRAM with Micron CellularRAM memory TN-45-16 03/2006 208.91 KB
Using CellularRAM Memory to Replace Single- and Dual-Chip Select SRAM:  Discusses migrating a single- or dual-chip select SRAM design to Micron CellularRAM memory. Both hardware and software changes are covered. TN-45-17 01/2007 179.87 KB
Using CellularRAM Memory to Replace NEC Mobile Specified RAM (PD46128512):  Discusses migrating a 128Mb NEC Mobile Specified RAM design (PD46128512) to Micron 128Mb CellularRAM memory (MT45W8MW16B). Both hardware and software changes are covered. TN-45-18 03/2006 228.87 KB
Low-Power Options for Async/Page CellularRAM:  Discusses the low-power options available to customers on async/page CellularRAM memory devices TN-45-20 05/2006 197.19 KB
Variable vs. Fixed Latency CellularRAM Operation:  This technical note assists designers in understanding the differences between CellularRAM variable and fixed latency operations TN-45-22 07/2006 122.39 KB
Using CellularRAM Memory on a NOR FLASH Bus:  Discusses design considerations when placing a CellularRAM memory device on a NOR Flash bus TN-45-23 07/2006 391.96 KB
Fixed-Latency Operation in CellularRAM 1.0 Devices:  Details how Micron has enhanced CellularRAM CR1.0 functionality TN-45-24 08/2006 187.66 KB
Using Micron Asynchronous PSRAM with ADI ADSP-BF53x Blackfin Processors:  Describes the design requirements for a seamless memory connection between Analog Devices Blackfin processors and Micron 70ns, 8Mb asynchronous PSRAM devices TN-45-27 06/2007 265.86 KB
Using a Micron CellularRAM Device with the AMCC PPC405EZ Embedded Processor:  Describes the design requirements for a seamless memory connection between the PPC405EZ and a Micron CellularRAM device TN-45-28 02/2006 288.01 KB
Using Micron Asynchronous PSRAM with the NXP LPC2292 and LPC2294 Microcontrollers:  Describes the design requirements for a seamless memory connection between the NXP LPC2292 and LPC2294 family of microcontrollers and a Micron asynchronous PSRAM device TN-45-29 06/2007 255 KB
PSRAM 101: An Introduction to Micron CellularRAM and PSRAM:  Demonstrates PSRAM and CellularRAM memory advantages over other memory options for use in mobile handsets; and presents available configurations TN-45-30 05/2008 351.24 KB
Connecting Micron CellularRAM Devices with the Atmel Microcontroller:  Describes the preferred methods for connecting Micron CellularRAM devices to the Amtel microcontroller TN-45-33 06/2008 525.62 KB
IBIS Behavioral Models:  Micron has been a member of the IBIS Open Forum for many years and fully supports the IBIS specification. IBIS models for most Micron products are available for download from the Micron Web site. TN-00-07 11/2009 163.98 KB
Thermal Applications:  Defines a general method and criteria for measuring and ensuring that Micron components and modules do not exceed the maximum allowable temperature TN-00-08 05/2010 252.18 KB
Understanding Quality and Reliability Requirements for Bare Die Applications:  Describes the quality and reliability requirements for bare die applications TN-00-14 10/2009 152.83 KB
Recommended Soldering Parameters:  Defines the recommended soldering techniques and parameters for Micron Technology, Inc., products. TN-00-15 03/2007 69.09 KB
Uprating of Semiconductors for High-Temperature Applications:  Describes the issues associated with temperature uprating and the risks involved in using components and/or systems outside the manufacturer's environmental specifications TN-00-18 05/2010 428.33 KB
Understanding Signal Integrity:  Describes how memory design, test, and verification tools can be used to the greatest advantage, from conception of a new product through end of life TN-00-20 12/2009 1.52 MB
SEMI Wafer Map Format:  Micron has adopted the wafer map file format approved by Semiconductor Equipment and Materials International (SEMI). With SEMI formatting, Micron's customers can be confident they will always receive consistent, compatible, reliable map files. TN-00-21 02/2009 110 KB
Thinning Considerations for Wafer Products:  Information on optimal wafer-thinning processes to meet specific customer requirements TN-00-19 10/2009 73.58 KB
Moisture Absorption in Plastic Packages:  Describes shipping procedures for preventing memory devices from absorbing moisture and recommendations for baking devices exposed to excessive moisture TN-00-01 02/2010 87.26 KB
Accelerate Design Cycles with Simulation Models:  Micron supplies the tools and guidelines necessary to verify new designs prior to layout. This technical note discusses software model support, signal integrity optimization, and logic circuit design. TN-00-09 02/2010 206.91 KB
Micron Wire-Bonding Techniques:  This technical note provides guidance on wire bonding techniques for both nickel-palladium (NiPd) and aluminum (Al) bond pads on Micron products. TN-00-22 11/2010 66.13 KB
Bypass Capacitor Selection for High-Speed Designs:  Describes bypass capacitor selection for high-speed designs. TN-00-06 03/2011 481.9 KB

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PSRAM/CellularRAM