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IBIS Behavioral Models:
Micron has been a member of the IBIS Open Forum for many years and fully supports the IBIS specification. IBIS models for most Micron products are available for download from the Micron Web site.
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TN-00-07
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11/2009
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163.98 KB
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Technical Note
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Thermal Applications:
Defines a general method and criteria for measuring and ensuring that Micron components and modules do not exceed the maximum allowable temperature
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TN-00-08
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05/2010
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252.18 KB
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Technical Note
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Understanding Quality and Reliability Requirements for Bare Die Applications:
Describes the quality and reliability requirements for bare die applications
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TN-00-14
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10/2009
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152.83 KB
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Technical Note
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Recommended Soldering Parameters:
Defines the recommended soldering techniques and parameters for Micron Technology, Inc., products.
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TN-00-15
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03/2007
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69.09 KB
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Technical Note
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Uprating of Semiconductors for High-Temperature Applications:
Describes the issues associated with temperature uprating and the risks involved in using components and/or systems outside the manufacturer's environmental specifications
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TN-00-18
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05/2010
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428.33 KB
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Technical Note
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Understanding Signal Integrity:
Describes how memory design, test, and verification tools can be used to the greatest advantage, from conception of a new product through end of life
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TN-00-20
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12/2009
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1.52 MB
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Technical Note
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SEMI Wafer Map Format:
Micron has adopted the wafer map file format approved by Semiconductor Equipment and Materials International (SEMI). With SEMI formatting, Micron's customers can be confident they will always receive consistent, compatible, reliable map files.
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TN-00-21
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02/2009
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110 KB
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Technical Note
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Thinning Considerations for Wafer Products:
Information on optimal wafer-thinning processes to meet specific customer requirements
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TN-00-19
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10/2009
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73.58 KB
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Technical Note
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LVTTL Derating for SDRAM Slew Rate Violations:
Describes the proper setup and hold time derating when the slew rate during transition time violates specification.
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TN-48-09
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11/2009
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196.24 KB
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Technical Note
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Backward Compatibility for Faster SDRAM:
Reviews the timing differences between SDRAM generations and shows how the faster Micron parts are compatible with the slower parts
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TN-48-15
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10/2005
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79.21 KB
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Technical Note
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Interfacing SDRAM Devices with Motorola's MPC8xx:
Describes how to interface SDRAM devices with Motorola's MPC8xx
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TN-48-12
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12/2001
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176.99 KB
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Technical Note
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Designing in SDRAM for Future Upgrades:
Describes how to design in SDRAM for future upgrades
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TN-48-08
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03/2004
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126.15 KB
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Technical Note
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Moisture Absorption in Plastic Packages:
Describes shipping procedures for preventing memory devices from absorbing moisture and recommendations for baking devices exposed to excessive moisture
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TN-00-01
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02/2010
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87.26 KB
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Technical Note
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Accelerate Design Cycles with Simulation Models:
Micron supplies the tools and guidelines necessary to verify new designs prior to layout. This technical note discusses software model support, signal integrity optimization, and logic circuit design.
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TN-00-09
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02/2010
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206.91 KB
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Technical Note
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Micron Wire-Bonding Techniques:
This technical note provides guidance on wire bonding techniques for both nickel-palladium (NiPd) and aluminum (Al) bond pads on Micron products.
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TN-00-22
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11/2010
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66.13 KB
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Technical Note
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SDRAM I/O Characteristics Comparison of 54nm to 130nm Die:
This technical note compares the I/O characteristics of the 54nm to the 130nm single data rate (SDR) synchronous dynamic random access memory (SDRAM) die.
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TN-00-24
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08/2011
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515.31 KB
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Technical Note
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Bypass Capacitor Selection for High-Speed Designs:
Describes bypass capacitor selection for high-speed designs.
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TN-00-06
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03/2011
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481.9 KB
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Technical Note
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