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NAND Flash Performance Increase :
Customers using the PAGE READ CACHE MODE operation provided in Micron NAND Flash devices will realize significant performance gains in systems requiring increased data volume at a much faster rate.
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TN-29-01
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05/2007
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205.94 KB
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Technical Note
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Small Block vs. Large Block NAND Devices:
Large-block NAND Flash devices offer significant performance increases over their small-block NAND Flash counterparts for READ, PROGRAM, and ERASE operations.
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TN-29-07
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05/2007
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387.87 KB
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Technical Note
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NAND Flash Security:
Using Micron NAND Flash security features to implement component and code authentication security solutions, designers can protect critical system components and proprietary system software from unwanted attacks and alterations.
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TN-29-11
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05/2007
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189.32 KB
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Technical Note
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Monitoring Ready/Busy Status in 2, 4, and 8Gb Micron NAND Flash Devices:
Four options for determining the NAND Flash ready/busy device status are presented with detailed explanations of each option.
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TN-29-13
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05/2007
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96.08 KB
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Technical Note
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NAND Flash Performance Increase with PROGRAM PAGE CACHE MODE Command:
This technical note discusses the benefits of PROGRAM PAGE CACHE MODE operations over normal PROGRAM PAGE operations. It also provides specific timing examples and instructions for performing PROGRAM PAGE CACHE MODE operations. Rev. C
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TN-29-14
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02/2010
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266.14 KB
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Technical Note
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Boot-from-NAND Using Micron MT28F1G08ABA NAND Flash with the Texas Instruments OMAP 2420 Processor:
Describes Boot-from-NAND using Micron MT29F1G08ABA NAND Flash with the Texas Instruments OMAP 2420 processor.
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TN-29-16
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06/2007
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435.55 KB
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Technical Note
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Booting from Embedded MMC:
Describes booting from an embedded ARM processor in the MMC environment
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TN-29-18
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06/2008
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282.02 KB
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Technical Note
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NAND Flash 101 - An Introduction to NAND Flash and How to Design It In to Your Next Product:
Provides an introduction to NAND Flash and how to design it into your next product. Rev. B
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TN-29-19
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04/2010
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968.5 KB
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Technical Note
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Improving NAND Flash Performance Using Two-Plane Command Enabled Micron Devices:
Describes the performance benefits of Micron two-plane commands, and provides implementation guidelines for making the best use of two-plane capabilities
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TN-29-25
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09/2008
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123.28 KB
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Technical Note
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NAND Flash Status Register Response in Cache Programming Operations:
Describes status register responses when operating in cache programming modes
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TN-29-26
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06/2007
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253.71 KB
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Technical Note
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Memory Management in NAND Flash Arrays:
Describes common NAND Flash memory-management methods for effective use of the NAND Flash memory array
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TN-29-28
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12/2009
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271.42 KB
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Technical Note
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Using COPYBACK Operations to Maintain Data Integrity in NAND Flash Devices:
Describes how to use COPYBACK operations in NAND Flash devices
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TN-29-41
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10/2008
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101.39 KB
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Technical Note
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Wear-Leveling Techniques in NAND Flash Devices:
Highlights the importance of wear leveling, explains two wear-leveling techniques, and discusses implementing wear leveling
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TN-29-42
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10/2008
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268.3 KB
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Technical Note
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NAND Flash Performance Improvement Using Internal Data Move:
NAND data management capabilities and higher system performance through NAND Flash internal data moves
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TN-29-15
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03/2010
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219.17 KB
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Technical Note
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IBIS Behavioral Models:
Micron has been a member of the IBIS Open Forum for many years and fully supports the IBIS specification. IBIS models for most Micron products are available for download from the Micron Web site.
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TN-00-07
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11/2009
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163.98 KB
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Technical Note
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Thermal Applications:
Defines a general method and criteria for measuring and ensuring that Micron components and modules do not exceed the maximum allowable temperature
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TN-00-08
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05/2010
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252.18 KB
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Technical Note
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Understanding Quality and Reliability Requirements for Bare Die Applications:
Describes the quality and reliability requirements for bare die applications
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TN-00-14
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10/2009
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152.83 KB
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Technical Note
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Recommended Soldering Parameters:
Defines the recommended soldering techniques and parameters for Micron Technology, Inc., products.
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TN-00-15
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03/2007
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69.09 KB
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Technical Note
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Uprating of Semiconductors for High-Temperature Applications:
Describes the issues associated with temperature uprating and the risks involved in using components and/or systems outside the manufacturer's environmental specifications
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TN-00-18
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05/2010
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428.33 KB
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Technical Note
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Understanding Signal Integrity:
Describes how memory design, test, and verification tools can be used to the greatest advantage, from conception of a new product through end of life
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TN-00-20
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12/2009
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1.52 MB
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Technical Note
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SEMI Wafer Map Format:
Micron has adopted the wafer map file format approved by Semiconductor Equipment and Materials International (SEMI). With SEMI formatting, Micron's customers can be confident they will always receive consistent, compatible, reliable map files.
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TN-00-21
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02/2009
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110 KB
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Technical Note
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Thinning Considerations for Wafer Products:
Information on optimal wafer-thinning processes to meet specific customer requirements
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TN-00-19
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10/2009
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73.58 KB
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Technical Note
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Micron® ECC Module for NAND Flash via Xilinx® Spartan™-3 FPGA:
Micron® ECC module was developed and tested using Xilinx® Spartan™-3 and can be ported to certain other platforms of the user’s choosing.
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TN-29-05
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05/2007
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997.75 KB
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Technical Note
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Micron® NAND Flash Controller via Xilinx® Spartan™-3 FPGA:
Describes the Micron NAND Flash controller, techniques for interfacing the NAND Flash device with a processor, and use of the Micron glueless interface to interface a processor with NAND Flash memory.
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TN-29-06
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06/2007
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872.4 KB
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Technical Note
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TN-29-37: Comparing 40 and 50-Series SLC NAND Flash Devices:
Prior to conversion, Micron recommends that the target design take into account the product data sheet and the specific changes highlighted in this technical note. This Technical note covers the M58A, M59A & M50A products.
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TN-29-37
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01/2009
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728.87 KB
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Technical Note
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Moisture Absorption in Plastic Packages:
Describes shipping procedures for preventing memory devices from absorbing moisture and recommendations for baking devices exposed to excessive moisture
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TN-00-01
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02/2010
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87.26 KB
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Technical Note
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NAND Flash Controller on Spartan-3:
This technical note describes the Micron NAND Flash controller, techniques for interfacing the NAND Flash device with a processor and use of the Micron glueless interface to interface a processor with NAND Flash memory.
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TN-29-06
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06/2007
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872.4 KB
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Technical Note
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ECC Module for Xilinx Spartan-3:
Describes the Micron® ECC module that was developed and tested using Xilinx® Spartan™-3 and can be ported to certain other platforms of the user’s choosing.
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TN-29-05
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05/2007
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997.75 KB
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Technical Note
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Accelerate Design Cycles with Simulation Models:
Micron supplies the tools and guidelines necessary to verify new designs prior to layout. This technical note discusses software model support, signal integrity optimization, and logic circuit design.
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TN-00-09
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02/2010
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206.91 KB
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Technical Note
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Determining NAND Flash Ready/Busy Status:
Systems that utilize NAND Flash memory can use either the ready/busy pin or the status register to determine whether a Micron® NAND Flash device is busy or ready to accept a new command. This technical note addresses the use of status register bit 5, which indicates the ready/busy status of the NAND Flash device.
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TN-29-13
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02/2010
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136.48 KB
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Technical Note
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TN-29-51: Migrating from 50-Series to 60-Series SLC NAND Flash Devices:
Migrating from 50-Series to 60-Series SLC NAND Flash Devices; M58A, M59A, M50A, M68A, M69A, M60A
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TN-29-51
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05/2011
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121.59 KB
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Technical Note
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TN-29-52: Migrating 1Gb 48nm and 2Gb/4Gb 57nm SLC NAND Flash Memory to 34nm:
Provides guidelines for migrating 1Gb 48nm and 2Gb/4Gb 57nm SLC, large-page NAND Flash memory to 34nm technology (M60A, M69A & M68A)
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TN-29-52
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10/2010
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180.46 KB
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Technical Note
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TN-29-17: NAND Flash Design and Use Considerations:
Describes design and use considerations for NAND Flash memory, focusing on bad-block identification and error correction.
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TN-29-17
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09/2010
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226.04 KB
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Technical Note
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Migrating from a Chip Enable Care to a Don't Care NAND Flash Memory:
The purpose of this application note is to highlight the differences between Chip Enable don’t care and Chip Enable care devices.
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AN2365
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10/2010
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265.78 KB
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Technical Note
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Micron Wire-Bonding Techniques:
This technical note provides guidance on wire bonding techniques for both nickel-palladium (NiPd) and aluminum (Al) bond pads on Micron products.
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TN-00-22
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11/2010
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66.13 KB
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Technical Note
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Bypass Capacitor Selection for High-Speed Designs:
Describes bypass capacitor selection for high-speed designs.
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TN-00-06
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03/2011
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481.9 KB
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Technical Note
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Enabling a Flash Memory Device into the Linux MTD:
The technical note introduces the Linux memory technology device (MTD) architecture and provides a basis for understanding how to enable new devices and new features into the Linux MTD.
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TN-00-25
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05/2011
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528.81 KB
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Technical Note
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Hamming Codes for NAND Flash Memories:
Outlines hamming codes NAND Flash memory
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TN-29-08
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05/2007
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229.46 KB
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Technical Note
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TN-29-56: Enabling On-Die ECC for OMAP3 on Linux/Android OS:
Enabling NAND On-Die ECC for OMAP3 Using Linux/Android OS with YAFFS2. M60A, M69A, M68A.
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TN-29-56
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12/2010
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331.14 KB
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Technical Note
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TN-29-57: Migrating from 50-Series to 60-Series SPI NAND:
Supplements the product change notification (PCN) covering the transition from Micron® 50-series (50nm) to 60-series (34nm) single-level cell (SLC) SPI NAND Flash devices.
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TN-29-57
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05/2011
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164.87 KB
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Technical Note
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TN-29-58: ONFI NV-DDR2 Design Guide:
Rev. A
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TN-29-58
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03/2011
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685.04 KB
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Technical Note
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Bad Block Management in NAND Flash Memory:
This technical note explains how to recognize factory-generated bad blocks and manage bad blocks that develop during the lifetime of NAND Flash memory.
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TN-29-59
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10/2010
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317.81 KB
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Technical Note
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Garbage Collection in SLC NAND Flash Memory:
This technical note describes the recommended garbage collection algorithm to be implemented in the Flash Translation Layer (FTL) software for single-level cell (SLC) NAND Flash memory devices.
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AN1821
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10/2010
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207.37 KB
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Technical Note
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Wear Leveling in NAND Flash Memory:
This technical note describes the recommended wear leveling algorithm to be implemented in the FTL software for NAND Flash memory.
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TN-29-61
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10/2010
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213.59 KB
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Technical Note
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Software Device Drivers for Large Page Micron NAND Flash Memory Devices:
This technical note explains how to use the Micron large page NAND Flash memory software device drivers.
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TN-29-62
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10/2011
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624.45 KB
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Technical Note
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Error Correction Code in SLC NAND Flash:
This technical note describes how to implement error correction code (ECC) in Micron small page and large page single-level cell (SLC) NAND Flash memory that can detect 2-bit errors and correct 1-bit errors per 256 or 512 bytes.
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TN-29-63
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10/2010
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486.67 KB
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Technical Note
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Software Device Drivers for Small Page Micron NAND Flash Memory:
This technical note explains how to use the Micron small page NAND Flash memory software drivers.
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TN-29-64
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10/2010
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889.73 KB
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Technical Note
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Software Device Drivers for Very Large Page Micron NAND Flash Memory:
This technical note explains how to use the Micron very large page NAND Flash memory software device drivers.
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TN-29-65
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10/2010
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405.64 KB
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Technical Note
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Enabling Software BCH Error Correction Code (ECC) on a Linux Platform:
This technical note addresses applications using existing 1-bit ECC processors to enable Micron MT29F1GxxABxDA, MT29F2GxxABxEA, MT29F4GxxABxDA, and MT29F1GXXABXEA NAND Flash memory devices with software BCH ECC.
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TN-29-71
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04/2012
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688.7 KB
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Technical Note
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